Phase-formation kinetics of xerogel and electrical properties of sol-gel-derived BaxSr1−xTiO3 thin films

Abstract

Chemically homogeneous BaxSr1−xTiO3 (BST with x = 0.6) multicomponent sol was synthesized using barium oxide, strontium chloride, and Ti-alkoxide (titanium isopropoxide) as starting materials. Acetylacetone (AcAc) was introduced as a chelating agent to reduce a rapid hydrolysis rate of Ti-alkoxide. Analysis of Fourier transform infrared spectroscopy (FTIR) spectra indicated that the stabilization of BST sols was achieved by the chelation of Ti-alkoxide with the enolic form of AcAc. The effective activation energy associated with the formation of perovskite phase from the xerogel was estimated by the differential thermal analysis (DTA) experiment using various heating rates. It is approximately 400 kJ/mol with the Avrami exponent (reaction order) of n = 1, suggesting that the growth of perovskite BST is diffusion-controlled. The calculated half-life time suggests that the minimum temperature for the crystallization which is practically accessible to a real processing is approximately 600 °C. The BST thin film fabricated on the “Pt(150 nm)/Ti(100 nm)/SiO2(100 nm)/Si” substrate exhibited the relative dielectric permittivity of 310 and can be represented by an equivalent circuit consisting of a resistive component originated from the bulk perovskite grain and a parallel RC component resulting from the presence of the grain boundary.