Author:
Kinomura A.,Takai M.,Matsuo T.,Satou M.,Kiuchi M.,Fujii K.,Namba S.
Abstract
ABSTRACTRutherford backscattering (RBS) analysis of small-sized structures, fabricated by laser chemical vapor deposition (LCVD) with a focused laser beam and ion implantation with a focused ion beam (FIB), has been performed by a microprobe with focused 1.5 MeV helium ions. Micro-RBS spectra and RBS-mapping images revealed a local distribution of masklessly deposited Mo layers on GaAs and local doses of masklessly implanted Au atoms in Si.
Publisher
Springer Science and Business Media LLC