Microstructures in Sic and Si3N4Implanted with Ti and Heat Treated

Abstract

ABSTRACTBulk SiC and Si3N4have been implanted with Ti at room temperature, and subsequently vacuum heat treated between 800° and 1100°C. All specimens were backthinned by ion milling and examined in TEM. SiC becomes amorphous on implantion, and develops a fine dispersion of TiC precipitates up to 800°C. At 900°C recrystallization has begun, possibly nucleated by the TiC particles. Si3N4shows fine TiN particles in an amorphous matrix even as implanted. This structure is retained up to 900°C. At 1000°C, regrowth of the Si3N4apparently from the substrate begins, and the TiN particles also grow as large as 200nm.