Author:
Yoshida Mihoko,Taylor P.C.
Abstract
ABSTRACTLight-induced changes in electron spin resonance (ESR) signal intensity and photoluminescence (PL) intensity in device quality a-Si:H are compared. Different dependences on the light soaking temperature for the ESR spin density and the PL peak intensity at ∼ 1.3 eV suggest that a non-radiative process, that does not directly involve neutral dangling bonds, influences the photoluminescence at the peak. After light soaking no clear increase of the peak in the low energy luminescence region (∼ 0.8 eV) was observed even at higher temperatures (> 200 K), where the low energy luminescence band is relatively more important.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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