Light-induced photoluminiscence fatigue in a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures
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1. Electronic and Optical Properties of Amorphous Silicon;Amorphous Semiconductors;2016-12-30
2. Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination;Physical Review B;1997-06-15
3. Photoluminescence fatigue in amorphous carbon (a-C) films prepared by d.c. magnetron sputtering;Solid State Communications;1994-02
4. Optical-bias effects in electron-drift measurements and defect relaxation ina-Si:H;Physical Review B;1993-09-15
5. Defect Relaxation in a-Si:H Studied by Defect Absorption and Luminescence;MRS Proceedings;1993-01-01
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