The limits of patterning in X-ray lithography

Abstract

ABSTRACTWe show how the imaging process in proximity X-ray lithography is capable of reaching the sub-100 nm range. However, The use of proximity X-ray lithography is dependent on the mask to form the correct image of the pattern. The joint development of electron beam lithography patterning tools with high-placement accuracy, of a better understanding of the mask mechanical response and of new aligners, clearly indicates that the goal of using X-ray lithography for nanolithography applications is reachable.