Abstract
ABSTRACTDoping of III-V semiconductors is an essential part of growth and processing technology for optoelectronic and high speed electronic devices. This review covers several recent developments in III-V doping including (i) the high-concentration regime for p-type dopants in InP and GaAs, (ii) the sensitivity of doping incorporation on the crystal orientation, (iii) compensation mechanisms in Si-doped GaAs, and (iv) p-type carbon doping in GaAs and AlxGa1-xAs.
Publisher
Springer Science and Business Media LLC
Cited by
7 articles.
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