Oxygen Related Lattice Defects in Silicon: Present Status-Reference-Cited by-同舟云学术

Oxygen Related Lattice Defects in Silicon: Present Status

Published:1992 Issue: Volume:262 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Bender Hugo,Vanhellemont Jan

Abstract

ABSTRACTThe structural characterization of the oxygen related lattice defects formed under different thermal cycling conditions is discussed. The present understanding on the nature of rod-like defects and oxide precipitates is reviewed. Attention is given to the whole lattice defect spectrum which is induced by the oxygen precipitation. The influence of carbon and dopants on the defects is discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference32 articles.

1. Transmission Electron Microscope Studies of O, C, N Precipitation in Crystalline Silicon

2. Diffusion-limited growth of oxide precipitates in czochralski silison

3. Advances in the Understanding of Oxygen and Carbon in Silicon

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