Buried Insulators and/or Conductors in Singles-Crystal Silicon Using Porous Silicon Techniques

Abstract

AbstractPorous silicon lends itself to a variety of applications due to its unique characteristics such as an interconnected pore network, large surface area, and dopant-dependent selectivity of formation. Although the best-known application of porous Si is for silicon-on-insulator (SOI) fabrication, the porous silicon technique also offers elegant approaches for silicon-on-conductor (SOC) fabrication.In this paper, we present an overview of porous Si techniques for both SOI and SOC applications. Possible limitations of the oxidized porous silicon process, for SOI in particular, are discussed. We also consider novel and multilayered structures which might be obtained using porous silicon.