Trade-Offs For RAD-Hard Soi Structures

Abstract

AbstractTotal dose, dose rate, transient, single event upset and neutron radiation effects for dielectrically isolated MOS devices on S01(silicon-on-insulator) substrates are discussed. For large-scale, high-speed circuits, material, layout and process characteristics optimized for high circuit yield and reliability may conflict with improvements required to extend radiation thresholds. Some radiation hardening techniques applicable to silicon-on-insulator high speed thin film MOS devices are presented.