Computer Modeling of Lateral Epitaxial Growth Over Oxide

Abstract

ABSTRACTRadiative melting of Si with an extended stationary heater and its crystallization are modeled numerically. The two-dimensional model provides the velocity and shape of the solid-liquid interface, above and below a buried oxide structure with slit-shaped openings. The results show qualitative agreement with the experimental data. Superheating and undercooling are included in the calculation and the amount of superheating is confirmed experimentally.