Thermal analysis of incandescent lamp zone‐melting recrystallization of thin silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353869
Reference18 articles.
1. The role of reflectivity change in optically induced recrystallization of thin silicon films
2. Subboundary‐free zone‐melt recrystallization of thin‐film silicon
3. Topographic Imperfections in Zone Melting Recrystallized Si Films on SiO2
4. Numerical Modeling of Energy-Beam Induced Localized Melting of Thin SI Films
5. Thermal modeling of zone‐melting‐recrystallization processing of silicon‐on‐insulator film structures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical analysis of melt/solid interface shape in zone melting recrystallization process;Journal of Crystal Growth;1997-03
2. The incorporation of convection in 1D models of float zone and traveling solvent techniques;Journal of Crystal Growth;1996-09
3. Thermal analysis of float‐zone traveling solvent crystal growth of LaB6;Journal of Applied Physics;1996-07
4. Thermal evaluation of zone-melting recrystallization of thin-film structures over a wide range of melting points;Journal of Materials Research;1995-04
5. Thermal parameters affecting low temperature zone‐melting recrystallization of films;Journal of Applied Physics;1994-02
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