DIFFRACTION STUDIES OF METAL-SEMICONDUCTOR INTERFACES-Reference-Cited by-同舟云学术

DIFFRACTION STUDIES OF METAL-SEMICONDUCTOR INTERFACES

Published:1985 Issue: Volume:56 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

CHERNS D.,KIELY C.J.

Abstract

AbstractThe use of convergent beam electron diffraction patterns (CBPs) for investigating metal—semiconductor interfaces in plan—view samples is considered. It is shown that a wide—angle diffraction technique provides a sensitive method of measuring tetragonal distortions in NiSi 2/(001)Si bicrystals. A study of CBP symmetry and the detailec branch structure in higher order Laue zone rings has enabled the interfacial rigid body displacement in NiSi 2/(001)Si and Al/(001)GaAs films to be determined.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. [5] Tanaka M. , Saito R. , Oeno K. , Harada Y. , J.Electron Microscopy 29, 408 (1980)

2. [6] Eaglesham D.J. , C.J.Kiely, D.Cherns and Missous M. , Phil.Mag: submitted.

3. [1] Cherns D. , J.C.H.Spence, Anstis G.R. and Hutchison J.L. , Phil.Mag.A46, 849 (1982)

4. The atomic structure of the NiSi2-(001)Si interface

5. [4] M.Missous and E.H.Rhoderick. Proc.3rd MBE Workshop, France 1985: to be published

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