Residual Defects after Pulsed Laser Annealing of Ion implanted Silicon

Abstract

ABSTRACTCapacitance transient spectroscopy has been used to investigate the electrically active defects subsisting, after a ruby laser pulse annealing, in ion implanted silicon. In contrast to the common view, it is shown that the identified point defects are related to residual implantation related defects buried beyond the dopant distribution and not to the laser effect.