Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation-Reference-Cited by-同舟云学术

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Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation

Published:2020-01-17 Issue:5 Volume:35 Page:508-515
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Jia Xin,Wei Jun-jun,Huang Yabo,Shao Siwu,An Kang,Kong Yuechan,Wu Lishu,Qi Zhina,Liu Jinlong,Chen Liangxian,Li Chengming

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Degradation of Aluminum Nitride Powder in an Aqueous Environmet

2. X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution

3. XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

4. The intrinsic thermal conductivity of AIN

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1. An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer;Applied Surface Science;2024-03

2. The uniform and robust 8-inch CVD diamond plate generated by dual-magnetic field controlled DC Jet CVD;Diamond and Related Materials;2024-01

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4. Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density;Journal of Crystal Growth;2023-05

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