XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy-Reference-Cited by-同舟云学术

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XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

Published:2008-09 Issue:9 Volume:40 Page:1254-1261
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Rosenberger Leland,Baird Ronald,McCullen Erik,Auner Gregory,Shreve Gina

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference42 articles.

1. Surface chemistry and hydrolysis of a hydrophobic-treated aluminium nitride powder

2. Optical and surface analysis of DC-reactive sputtered AlN films

3. Characterization of AlN Thin Films Prepared by Unbalanced Magnetron Sputtering

4. Reactions of trimethylaluminum and ammonia on alumina at 600 K — surface chemical aspects of AlN thin film growth

5. XPS investigation of AlN formation in aluminum alloys using plasma source ion implantation

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