Segregation and Crystallization Phenomena in Germanium

Abstract

ABSTRACTWhile many studies have been made of liquid phase epitaxy impurity trapping and segregation in Si little is known about the equivalent processes in Ge. In this paper we have laser annealed Ge <100> and <111> crystals implanted, at liquid nitrogen temperature, with 200 keV 210Bi ions to doses of 2 × 1015 and 1016 ions cm−2. The samples were annealed with Q-switched ruby lasers and an XeCl excimer laser. We have observed 1) velocity and orientation dependence of the Bi segregation coefficient 2) interface instability and cell formation resulting from constitutional supercooling and 3) amorphization and defect production at high velocities. The phenomena are shown to be analogous to those seen in Si.