Growth of Silicon-on-Insulator Films using a Line-Source Electron Beam

Abstract

ABSTRACTA swept line-source electron beam has been used to study unseeded Si-on-insulator crystallization at beam scan speeds of 150–1500 cm/s. For a particular sample configuration a maximum linear crystallization velocity of ~ 350 cm/s was observed. At higher sweep speeds, competing nucleation occurred at intervals across the film. Both the limit in crystallization velocity and the intervals between nucleation are tentatively explained by a simple model.