Author:
Myers S. M.,Headley T.J.,Hills C.R.,Han J.,Petersen G.A.,Seager C.H.,Wampler W.R.
Abstract
Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations ∧1 at.%, faceted H2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ∧0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Cited by
2 articles.
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1. Raman scattering studies on hydrogen ion-implanted GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07
2. Effects of proton implantation on electrical and recombination properties of n-GaN;Solid-State Electronics;2000-11