Raman scattering studies on hydrogen ion-implanted GaN
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
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1. H+ ion implantation-induced effect investigations in a-plane GaN layer on r-plane sapphire;Applied Physics A;2023-09-07
2. Growth and Characterization of Manganese Doped Gallium Nitride Nanowires;Journal of Nanoscience and Nanotechnology;2008-08-01
3. Study of in-depth strain variation in ion-irradiated GaN;Journal of Materials Science: Materials in Electronics;2007-12-29
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