Growth and Characterization of Manganese Doped Gallium Nitride Nanowires

Abstract

Manganese doped GaN nanowires have been grown by chemical vapour transport method on sapphire (0001) substrates in the temperature range of 800–1050 °C. The surface features of nanowires have been investigated using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray analysis (EDAX), Raman scattering studies and Electron Paramagnetic Resonance (EPR). SEM images showed that the morphology of the one dimensional materials included straight nanorods and nanowires around 70–80 nm. Raman spectrum showed the GaMnN vibrational modes at 380, 432 and 445 cm−1. EPR measurements were performed on Mn doped GaN nanowires in order to evaluate the magnetic behaviour.