Physics-Based Intrinsic Model for AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

Published:1999 Issue:S1 Volume:4 Page:775-780
ISSN:1092-5783
Container-title:MRS Internet Journal of Nitride Semiconductor Research
language:en
Short-container-title:MRS Internet j. nitride semicond. res.

Author:

Wu Shangli,Webster Richard T.,Anwar A. F. M.

Abstract

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Reference9 articles.

1. Two‐dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates

2. GaN, AlN, and InN: A review

3. GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors

4. Two‐dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates

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