High quality GaN films - growth and properties-Reference-Cited by-同舟云学术

High quality GaN films - growth and properties

Published:1998 Issue: Volume:3 Page:
ISSN:1092-5783
Container-title:MRS Internet Journal of Nitride Semiconductor Research
language:en
Short-container-title:MRS Internet j. nitride semicond. res.

Author:

Paku ,a K.,Baranowski Jacek M.,Leszczyn˜ski M.,Suchanek B.,Wojdak M.

Abstract

Growth of GaN/Al2O3 layers by MOVPE has been investigated. Precise optimization of the growth parameters results in films with extremely high electron mobility: 900 cm2/Vs at 300K and 4000 cm2/Vs at 77K. The influence of the growth parameters on film properties like morphology, crystallographic structure, and the concentration of electrically active defects is presented. The mechanism of dislocation density reduction is proposed to explain the obtained results.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Reference6 articles.

1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

4. [6] Liliental-Weber Z. , Washburn J. , Pakula K. , Baranowski J. , “Convergent beam electron diffraction and transmission electron microscopy study of interfacial defects in gallium nitride homoepitaxial films”, Microsc. Microanal. 3 (1997)

5. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Residual donors in wurtzite GaN homoepitaxial layers and heterostructures;physica status solidi (b);2003-01

2. Low field excitonic Zeeman splittings in gallium nitride;Solid State Communications;2002-10

3. Dynamics of excitonic recombination and interactions in homoepitaxial GaN;Physical Review B;2002-05-28

4. Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer;Applied Surface Science;2001-06

5. Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers;Applied Physics Letters;2000-08-28