Author:
Schropp R.E.I.,Rath J.K.,Stannowski B.,Werf C.H.M. Van Der,Chen Y.,Wagner S.
Abstract
ABSTRACTDirect deposition of polycrystalline silicon (poly-Si) thin films by the Hot Wire CVD method has been used for the first time for the fabrication of poly-Si top gate Thin Film Transistors (TFTs). The TFTs have a high electron mobility in saturation of up to 4 cm2V−1s−1 as well as a remarkably large ON/OFF ratio of up to 6 × 105.
Publisher
Springer Science and Business Media LLC
Cited by
7 articles.
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