MOCVD Growth of Copper and Copper Oxide Films from Bis-β-Diketonate Complexes of Copper. The Role of Carrier Gas on Deposit Composition.-Reference-Cited by-同舟云学术

MOCVD Growth of Copper and Copper Oxide Films from Bis-β-Diketonate Complexes of Copper. The Role of Carrier Gas on Deposit Composition.

Published:1991 Issue: Volume:250 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Rees William S.,Caballero Celia R.

Abstract

AbstractAn examination of thermal chemical vapor deposit elemental composition by EDAX has been completed for material films grown from Cu(acac)2 and Cu(tmhd)2 (acac = pentane-2,4-dionate; tmhd = 2,2,6,6-tetramethylheptane-3,5-dionate), using both hydrous and anhydrous carrier gas steams each of reducing (H2), inert (H2), and oxidizing (O2) composition.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference23 articles.

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2. Metal-Organic chemical vapour deposition (mocvd) growth utilising cu(acac)2 (acac  pentane-3, 5-dionato) as a source for copper-containing materials: Influence of carrier gas on surface morphology

3. Laser Induced Chemical Vapor Deposition of Metals for Electrical Contacts in Semiconductor Processing

4. LCVD of copper: Deposition rates and deposit shapes

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