Synthesis of Zn1–xMgxO and its structural characterization

Abstract

Zn1–xMgxO is an important material for optoelectronic devices. We synthesized this material using a solution-based route. We investigated in detail the structural behavior of this material system using x-ray diffraction and Raman spectroscopy. Mg substitution up to x ≈ 0.10 does not change the crystal structure, as revealed by x-ray diffraction and Raman spectroscopic studies. This synthesis route is also suitable to prepare thin films by spin coating with the possibility of p and n doping.