Author:
Tillack B.,Bolze D.,Fischer G.,Kissinger G.,Knoll D.,Ritter G.,Schley P.,Wolansky D.
Abstract
ABSTRACTWe have determined the process capability of Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD) of epitaxial Si/SiGe/Si stacks for heterojunction bipolar transistors (HIBTs). The transistor parameters primarily influenced by the epitaxial characteristics were measured for 600 identically processed 4” wafers. The results demonstrate that it is possible to control accurately the epitaxial process for a 25 nm thick graded SiGe base profile with 20 % Ge and very narrow B doping (5 nm). The pipe limited device yield of about 90 % for an emitter area of 104 μm2 indicates a very low defect density in the epitaxial layer stack. The process capability indices determined from about 40,000 data points demonstrate the stability and capability of the LP(RT)CVD epitaxy with regard to manufacturing requirements.
Publisher
Springer Science and Business Media LLC
Reference9 articles.
1. 5. Ritter G. et al. in ESSDERC'97 Tech.Dig., edited by H. Grtinbacher (Editions Frontieres 1997) pp. 424–427.
2. 2. Ahlgren D. C. et al., IEDM Tech. Dig., pp. 859–862, (1996).
3. 1. Harame D. L. et al., IEDM Tech. Dig., pp. 19–22, (1992).
4. 3. Temmler D. et al., in 1997 Conference on Silicon Heterostructures: From Physics to Devices Tech. Dig., (Eng.Found.1997)
5. Detection and characterization of microdefects and microprecipitates in Si wafers by Brewster angle illumination using an optical fiber system
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strained SiGe and Si Epitaxy;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13
2. Strained SiGe and Si Epitaxy;Silicon Heterostructure Handbook;2005-11
3. Spectroscopic ellipsometry for in-line process control of SiGe:C HBT technology;Materials Science in Semiconductor Processing;2005-02