Electron Beam Pumped MQW InGaN/GaN Laser

Abstract

E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and a variety of applications typically associated with optically pumped lasers. For the first time an InGaN/GaN multiple quantum well (MQW) in-plane laser pumped by surface normal pulse and scanning electron beams was demonstrated. Pumping at room temperature (RT) and 80 K showed peak stimulated emission wavelengths of 402 and 409 nm with a full width half maximum (FWHM) of 0.6 nm and 1.2 nm, respectively. The threshold electron beam current densities have been estimated as 60 A/cm2 for 35 keV electron energy at 80 K using scanning e-beam pumping and 200-300 A/cm2 at RT using pulsed e-beam pumping with a maximum electron energy of 150 keV. At 80 K, light output of 150 mW was measured out of one facet at an e-beam current of 1.7 mA.