Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer-Reference-Cited by-同舟云学术

Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

Published:2017-06-07 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Hayashi Takafumi,Kawase Yuta,Nagata Noriaki,Senga Takashi,Iwayama Sho,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu,Matsumoto Takahiro

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-03151-8.pdf

Reference23 articles.

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2. Koike, M. et al. GaInN/GaN multiple quantum wells green LEDs. SPIE 3002, 36 (1997).

3. Nakamura, S., Senoh, M., Iwasa, N. & Nagahama, S. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structeres. Jpn. J. Appl. Phys. 34, L797–L799, doi: 10.1143/JJAP.34.L797 (1995).

4. Amano, H., Sawaki, N., Akasaki, I. & Toyoda, Y. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Appl. Phys. Lett. 48, 353–355, doi: 10.1063/1.96549 (1986).

5. Akasaki, I. & Amano, H. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode. Jpn. J. Appl. Phys. 45, 9001–9010, doi: 10.1143/JJAP.45.9001 (2006).

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