Author:
Zhu Q.S.,Zhang Z.F.,Wang Z.G.,Shang J.K.
Abstract
Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/SnBi interconnects. The presence of Ag film introduced Ag3Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu3Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
24 articles.
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