Simultaneous Fabrication of Insulator and Contact Holes by Excimer Laser

Abstract

AbstractA SiO2 insulator and contact holes were simultaneously fabricated at room temperature by ArF and KrF excimer lasers. In this method, NF3 and O2 gases were employed for the reaction gas. When the ArF laser beam irradiated the NF3 and O2 gases in the presence of Si, SiFn and NO2 were produced by photo-chemical reaction. The SiFn adsorbed on the Si substrate pulled out O atoms from the NO2 to form a SiO2 layer. At the same time, the patterned KrF laser beam projected on the substrate and ablated the part exposed to fabricate contact holes. As the results, the simultaneous fabrication of SiO2 insulator with the 700 Å film thickness and selective pattern with the 10 μm width was demonstrated.