Laser Assisted Chemical Vapor Deposition of Cu from a New Cu Organometallic Complex

Abstract

AbstractWe describe pyrolytic laser assisted chemical vapor deposition (LCVD) of copper onto silicon using a copper(I) hexafluoroacetylacetonate trimethylvinylsilane organometallic complex with 514.5 nm radiation from an Ar+ laser. Growth rates of 0.4-40 μm/min were obtained and at intermediate laser powers, the Cu lines had a resistivity comparable to that of bulk Cu. The line shape and morphology was strongly dependent upon laser power with volcano shapes appearing at higher powers. The growth was sensitive to the nature of the substrate suggesting that film nucleation was a critical element in the writing process.