ZnO Nanowire Based Photoconductor with High Photoconductive Gain

Abstract

ABSTRACTA high gain ZnO nanowire (NW) based photodetector was fabricated, which was sensitive to photoexcitation at or below 370 nm corresponding to the band-edge of ZnO. At an incident wavelength of 370 nm and a bias field of 5 kV/cm, the maximum responsivity was over 105 A/W corresponding to an extremely high photoconductive gain of the order of 106. Through this work we provide experimental evidence of the role of surface and defects in carrier dynamics, resulting in enhanced photoresponse. Using intensity and temperature dependence of the rise and decay rates of photocurrent, we present a detailed analysis that provides an estimate of the activation energies of carrier trapping mechanisms.