Author:
Benamara Mourad,Mazur Yuriy I.,Lytvyn Peter,Ware Morgan E.,Dorogan Vitaliy,Hu Xian,de Souza Leonardo D.,Marega Euclydes,Theodores Marcio,Marques Gilmar,Salamo Greg
Abstract
ABSTRACTThe influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.
Publisher
Springer Science and Business Media LLC