Roughness Characterization of Si(110) Etched in TMAH by Atomic Force Microscopy

Abstract

AbstractWe have investigated the roughness of a silicon (110)-oriented surface after being etched with 20% TMAH (Tetra-methyl Ammonium Hydroxide). We have used an Atomic Force Microscope to determine the roughness exponent α using three different methods: fractal, power spectrum density and scaling analysis. The value of the parameter α was identified to be close to 1/2. This value is different from the KPZ value, which is 0.4 in 2+1 dimension