Roughening of single-crystal silicon surface etched by KOH water solution-Reference-Cited by-同舟云学术

Roughening of single-crystal silicon surface etched by KOH water solution

Published:1999-03 Issue:1-2 Volume:73 Page:122-130
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Sato Kazuo,Shikida Mitsuhiro,Yamashiro Takashi,Tsunekawa Masaki,Ito Shunji

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. A. Koide et al., Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching, Proc. of IEEE Micro Electro Mechanical Systems (MEMS) Workshop, Nara, Japan, Feb. 1991, pp. 216–220.

2. Anisotropic multi-step etch processes of silicon;Fühauf;J. Micromech. Microeng.,1997

3. K. Sato et al., Characterization of Anisotropic Etching Properties of Single Crystal Silicon: The Effects of KOH Concentration on the Etching Profiles, Proc. of IEEE MEMS97 (Nagoya, 1997, 1. 26-30) 406–411.

4. K. Asaumi et al., Anisotropic-Etching Process Simulation System MICROCAD Analyzing Complete 3D Etching Profiles of Single Crystal Silicon, Proc. of IEEE MEMS97 (Nagoya, 1997, 1. 26-30) 412–417.

5. On the mechanism of anisotropic etching of silicon;Elwenspoek;J. Electrochem. Soc.,1993

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