Analysis of Stress Variations in Epitaxial Films Using Cathodoluminescence Microscopy and Spectroscopy-Reference-Cited by-同舟云学术

Analysis of Stress Variations in Epitaxial Films Using Cathodoluminescence Microscopy and Spectroscopy

Published:1990 Issue: Volume:188 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Yacobi B. G.,Sheldon P.

Abstract

ABSTRACTThis paper presents experimental results of a new application of cathodoluminescence microscopy in the analysis of stress variations in epitaxial layers. Cathodoluminescence microscopy and spectroscopy techniques, in conjunction with the known behavior of the optical transitions in the presence of stress, can be effectively used for both the qualitative and quantitative analyses of spatial variations of stress in epitaxial films.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

1. Cathodoluminescence observation of metallization‐induced stress variations in GaAs/AlGaAs multiple quantum well structures

2. Stresses and deformation processes in thin films on substrates

3. Cathodoluminescence Microscopy of Inorganic Solids

4. [7]. See, for example, reference 6, and references therein.

5. Semiconductor heterojunction topics: Introduction and overview

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical analysis of the process-induced stresses in silicon microstructures: application to micromachined cantilever;Smart Materials and Structures;2005-12-13

2. On the out-of-plane deformation of V-shaped micromachined beams;Journal of Micromechanics and Microengineering;2001-02-15

3. Residual stress determination by X-ray diffraction in tungsten thin films;Applied Surface Science;1993-03