Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds

Abstract

ABSTRACTSublimation growth of 6H-SiC has been studied with respect to surface morphology, growth temperature, supersaturation and growth rate. Growth was performed on the C-terminated face of 6H seeds mainly and for comparison also the Si-terminated face was used. Step bunching is observed dependent on different parameters and is strongly influenced by the seed orientation. The growth rate of 4H on the C-face is found to be higher than the rate of 6H grown on the Siface.