Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method-Reference-Cited by-同舟云学术

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Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method

Published:2000-05 Issue: Volume:338-342 Page:111-114
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Schulze Norbert¹,Barrett Donovan L.²,Weidner Michael³,Pensl Gerhard³

Affiliation:

1. University of Erlangen-Nürnberg

2. II-VI Incorporated

3. Friedrich-Alexander-Universität Erlangen-Nürnberg

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.111.pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of SiC crystal growth technology;Semiconductor Science and Technology;2018-09-05

2. Polytype inclusions and polytype stability in silicon-carbide crystals;Semiconductors;2016-04

3. Vapor Transport Growth of Wide Bandgap Materials;Handbook of Crystal Growth;2015

4. SiC Materials and Processing Technology;Silicon Carbide Microsystems for Harsh Environments;2011

5. Growth and Characterization of Silicon Carbide Crystals;Springer Handbook of Crystal Growth;2010

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