Epitaxial Growth of Fluoride Films on Silicon Substrates

Author:

Ishiwara Hiroshi,Asano Tanemasa

Abstract

ABSTRACTGrowth conditions and structural properties of vacuumevaporated fluoride films on Si(lll) and (100) substrates are reviewed. It has been found that single crystal CaF2 films are grown on both (111) and (100) substrates at temperatures of 600–800°C and 500–600°C, respectively. It has also been found that SrF2 and BaF2 films of good crystalline quality are grown on Si(lll) at temperatures around 600°C, but that the films grown on Si(100) contain (111) oriented crystallites. In epitaxial growth of a Si/CaF2/Si structure, a novel growth method is presented, in which a thin Si layer is deposited at room temperature prior to deposition of a thick Si film at elevated temperature. Investigations on growth of mixed fluoride films, radiation damage in CaF2 films, and epitaxial relations in the fluoride/Si heterostructures are also presented.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low Temperature Deposition of a CaF2 Insulator Layer on GaAs*;Angewandte Chemie International Edition in English;1989-11

2. Low Temperature Deposition of a CaF2 Insulator Layer on GaAs;Angewandte Chemie;1989-11

3. Low temperature deposition of a CaF2 insulator layer on GaAs;Advanced Materials;1989

4. Molecular Beam Epitaxy of Insulators, Metastable Phases and II–VI Compounds;Surface Properties of Electronic Materials - The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis;1988

5. Characterization of epitaxial (Ca,Ba)F2films on Si(111) substrates;Applied Physics Letters;1986-10-06

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