Author:
Bernath S.,Wagner T.,Hofmann S.,Rühle M.
Abstract
ABSTRACTTi thin films were grown by molecular-beam epitaxy (MBE) on α-Al2O3(0001) substrates. During room temperature deposition, in the very initial growth stage, AES investigations revealed a chemical reaction between the Ti and the α-Al2O3substrate. An analysis of the AES data based on simple assumptions showed that ∼ 2 monolayers of Ti are oxidized. However, HRTEM analysis indicated an atomically smooth, incoherent interface, without a reaction layer. Reflection high-energy electron diffraction (RHEED) analysis revealed an epitaxial orientation relationship (0001)<2110> Ti ∥ (0001)<1010>Al2O3between Ti and α-Al2O3(0001).
Publisher
Springer Science and Business Media LLC
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