Beam-Assisted CVD of Microelectronic Films-Reference-Cited by-同舟云学术

Beam-Assisted CVD of Microelectronic Films

Published:1983 Issue: Volume:29 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Emery K. A.,Thompson L. R.,Bishop D.,Zarnani H.,Boyer P. K.,Moore C. A.,Rocca J. J.,Collins G. J.

Abstract

ABSTRACTThe properties of SiO2 and Si3 N4 films deposited by an ArF excimer laser, glow discharge electron beam and conventional plasma-enhanced CVD are compared. The deposition apparatus, technique, and conditions in addition to the physical, chemical and electrical properties of the films are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference15 articles.

1. Comparison of properties of dielectric films deposited by various methods

2. VUV fluorescence following photodissociation of N2O at 193 nm

3. Conformal Step Coverage of Laser Deposited Silicon Dioxide Films

4. Transverse electron guns for plasma excitation

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