Abstract
ABSTRACTRecent studies have shown the potential of laser-induced chemical etching to become a powerful technique for processing electronic materials. In this paper, the unique strengths and limitations of the laser chemical approach are examined. Some photon-enhanced reaction mechanisms, in particular silicon-halogen reactions, are discussed to illustrate the many facets of the electronically, vibrationally and thermally activated surface processes. It is suggested that the field-assisted diffusion mechanism proposed by Winters, Coburn and Chuang may also be applicable to some photon-induced etching reactions. In addition, the salient features of the laser and the plasma-assisted etching methods are compared. The challenges to resolve certain fundamental and practical difficulties involved in developing the laser technique for processing technology are also outlined.
Publisher
Springer Science and Business Media LLC
Reference40 articles.
1. 8a Sekine M. , Okano H. and Horiike Y. , in Proceedings of 5th Symposium on Dry Processes (Tokyo, Japan, 1983, p. 97.
2. 23a 21, 422 (1982).
3. 8. Okano H. , Yamazaki T. , Sekine M. and Horiike Y. , in Proceedings of 4th Symposium on Dry Processes (Tokyo, Japan, 1982, p. 6;
4. Mechanism investigations of a pulsed laser light induced desorption
5. Electron spectroscopy study of silicon surfaces exposed to XeF2 and the chemisorption of SiF4 on silicon
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