Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics

Abstract

ABSTRACTPolyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metal-insulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at substrate temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the I-V data demonstrate a low leakage current value (<20fA) up to 100V with an area of 0.0307 mm2, resulting in a current density of <0.65 pA/mm2. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of positive mobile ions.