Effect of Implantation Conditions on the Microstructure of High-Current, Oxygen Implanted Silicon-on-Insulator Material

Abstract

ABSTRACTConventional and high resolution electron microscopy were used to study structural development in silicon-on-insulator material produced by oxygen implantation at temperatures of 525 to 700°C, doses of 0.3 to 1.8 × 1018 cm-2, and current densities of 1 and 10 mA/cm2. Implantation temperature has the strongest effect on the microstructure and defect formation, both in as-implanted and annealed material. In the top silicon layer of as-implanted SIMOX, oxygen bubbles form near the surface when the wafer temperature is ≥ 550°C. A new type of defect, the multiply faulted defect (MFD), has been observed at the upper edge of the implantation region with a density of 108 cm-2 in the samples implanted at the temperature of ≥ 600°C. As dose increases from 0.3 to 1.8 × 1018 cm-2, the bubbles grow larger and the trails of bubbles lengthen while the character and density of MFDs remain the same. A continuous buried oxide layer forms at doses ≥ 1.5 × 1018 cm2. No significant difference in structure is observed when a current-density increases from 1 to 10 mA/cm2.