Author:
Talyansky V.,Vispute R. D.,Andronescu S. N.,Iliadis A. A.,Jones K. A.,Choopun S.,Dowries M. J.,Sharma R. P.,Venkatesan T.,Li Y. X.,Salamanca-Riba L. G,Wood M. C.,Lareau R. A.
Abstract
AbstractWe have investigated the influence of TiN growth temperature on the contact resistance in TiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600°C formed low resistance contacts to n-type 6H-SiC and GaN of 1.1× 10−3 Ωcm2 and 7.9 ×10−5 Ωcm2, respectively. Structural and electrical characterization of TiN thin films is discussed.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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