Author:
Kamakshi Koppole,Silva J. P. B.,Kiran Kumar N. S.,Sekhar K. C.,Pereira M.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Reference29 articles.
1. J.E. Brewer and M. Gill: Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using Flash Memory Devices (John Wiley & Sons, New York, 2010).
2. F.C. Chiu, W.C. Shih, and J.J. Feng: Conduction mechanism of resistive switching films in MgO memory devices. J. Appl. Phys. 111, 094104 (2012).
3. A. Sawa: Resistive switching in transition metal oxides. Mater. Today 11, 28 (2008).
4. R. Waser, R. Dittmann, G. Staikov, and K. Szot: Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632 (2009).
5. C.C. Lin, C.Y. Lin, M.H. Lin, C.H. Lin, and T.Y. Tseng: Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO3 thin films. IEEE Trans. Electron Devices 54, 3146 (2007).