Chemical and Ion Beam Etch Studies of Polycrystalline Silicon

Abstract

ABSTRACTMS and MIS solar cell performance as a function of wet chemical etching history has been studied and correlated with lattice strain obtained from x-ray double-crystal diffraction technique and intragranular surface topography. Dry ion beam etching from a Kaufman ion source is found to damage the surface and radically alter the electrical barrier by introducing donor-like states in the damaged region.