Coarsening Phenomenon of Si Clusters

Abstract

ABSTRACTCoarsening phenomenon is observed among crystalline Si clusters which are deposited over silicon-oxide and -nitride surfaces by chemical vapor deposition using HC1 as an etching gas. As soon as the deposition starts, submicron-sized fine clusters nucleate and increase in number, but do not grow in size. Micron-sized large clusters emerge among the fine ones, gradually increase and rapidly grow, while the preexisting fine ones disappear finally. It is found that the fine clusters must be etched away into vapor again by HCl or reevaporated.