Asymmetric Relaxation in Epitaxial Layers of III-V Compounds-Reference-Cited by-同舟云学术

Asymmetric Relaxation in Epitaxial Layers of III-V Compounds

Published:1990 Issue: Volume:202 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Turnbull A. G.,Green G. S.,Tanner B. K.,Halliwell M. A. G.

Abstract

ABSTRACTRelaxation in a 3μm epitaxial layer of GaAsSb on GaAs, a 1μm layer of InGaAs on InP and an InGaAs superlattice on InP has been investigated by double crystal X-ray diffractometry and double crystal X-ray synchrotron topography and found to be asymmetric. The origins of assymetric relaxation are discussed and the sensitivity of diffractometry and topography to the detection of layer relaxation compared.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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